Abstract
We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.
Original language | English (US) |
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Article number | 6030901 |
Pages (from-to) | 946-953 |
Number of pages | 8 |
Journal | IEEE Photonics Journal |
Volume | 3 |
Issue number | 5 |
DOIs | |
State | Published - 2011 |
Keywords
- Tunable lasers
- multilayer interference coatings
- semiconductor lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering