@inproceedings{bfb281e8ad81479492e8c4c6ee241743,
title = "Wet and dry HF-last cleaning process for high-integrity gate oxides",
abstract = "The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.",
author = "C. Werkhoven and E. Granneman and M. Hendriks and \{De Blank\}, R. and S. Verhaverbeke and P. Mertens and M. Meuris and W. Vandervorst and M. Heijns and A. Philipossian",
note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",
year = "1992",
doi = "10.1109/IEDM.1992.307440",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "633--636",
booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",
}