Wet and dry HF-last cleaning process for high-integrity gate oxides

C. Werkhoven; E. Granneman; M. Hendriks; R. De Blank; S. Verhaverbeke; P. Mertens; M. Meuris; W. Vandervorst; M. Heijns; A. Philipossian

doi:10.1109/IEDM.1992.307440

Wet and dry HF-last cleaning process for high-integrity gate oxides

C. Werkhoven, E. Granneman, M. Hendriks, R. De Blank, S. Verhaverbeke, P. Mertens, M. Meuris, W. Vandervorst, M. Heijns, A. Philipossian

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.

Original language	English (US)
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	633-636
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307440
State	Published - 1992
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: Dec 13 1992 → Dec 16 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country/Territory	United States
City	San Francisco
Period	12/13/92 → 12/16/92

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.1992.307440

Cite this

Werkhoven, C., Granneman, E., Hendriks, M., De Blank, R., Verhaverbeke, S., Mertens, P., Meuris, M., Vandervorst, W., Heijns, M., & Philipossian, A. (1992). Wet and dry HF-last cleaning process for high-integrity gate oxides. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 633-636). Article 307440 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307440

Wet and dry HF-last cleaning process for high-integrity gate oxides. / Werkhoven, C.; Granneman, E.; Hendriks, M. et al.
1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 633-636 307440 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Werkhoven, C, Granneman, E, Hendriks, M, De Blank, R, Verhaverbeke, S, Mertens, P, Meuris, M, Vandervorst, W, Heijns, M & Philipossian, A 1992, Wet and dry HF-last cleaning process for high-integrity gate oxides. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307440, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 633-636, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 12/13/92. https://doi.org/10.1109/IEDM.1992.307440

Werkhoven C, Granneman E, Hendriks M, De Blank R, Verhaverbeke S, Mertens P et al. Wet and dry HF-last cleaning process for high-integrity gate oxides. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 633-636. 307440. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.1992.307440

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abstract = "The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.",

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AB - The suitability of using either a wet HF process or an integrated HF vapor process prior to clustered gate stack formation is compared. When ultra pure chemicals are used for wet chemical pre-cleaning, a systematic improvement of gate oxide integrity is noticeable in case of the integrated HF vapor etching technique. This is attributed to a more effective removal of the low quality wet chemical cleaning oxide and the more controllable initiation of the oxidation process.

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ER -

Wet and dry HF-last cleaning process for high-integrity gate oxides

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