Wavelength Uniformity of 13 alnAsP/lnP Distributed Bragg Reflector Lasers with Hybrid Beam/Vapour Epitaxial Growth

T. L. Koch; P. J. Corvini; U. Koren; W. T. Tsang

doi:10.1049/el:19880560

Wavelength Uniformity of 13 alnAsP/lnP Distributed Bragg Reflector Lasers with Hybrid Beam/Vapour Epitaxial Growth

T. L. Koch, P. J. Corvini, U. Koren, W. T. Tsang

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

Original language	English (US)
Pages (from-to)	822-824
Number of pages	3
Journal	Electronics Letters
Volume	24
Issue number	13
DOIs	https://doi.org/10.1049/el:19880560
State	Published - 1988
Externally published	Yes

Keywords

Epitaxy
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19880560

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title = "Wavelength Uniformity of 13 alnAsP/lnP Distributed Bragg Reflector Lasers with Hybrid Beam/Vapour Epitaxial Growth",

abstract = "We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 {\AA}) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.",

keywords = "Epitaxy, Semiconductor lasers",

author = "Koch, {T. L.} and Corvini, {P. J.} and U. Koren and Tsang, {W. T.}",

year = "1988",

doi = "10.1049/el:19880560",

language = "English (US)",

volume = "24",

pages = "822--824",

journal = "Electronics Letters",

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AU - Koch, T. L.

AU - Corvini, P. J.

AU - Koren, U.

AU - Tsang, W. T.

PY - 1988

Y1 - 1988

N2 - We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

AB - We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.

KW - Epitaxy

KW - Semiconductor lasers

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DO - 10.1049/el:19880560

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EP - 824

JO - Electronics Letters

JF - Electronics Letters

IS - 13

ER -

Wavelength Uniformity of 13 alnAsP/lnP Distributed Bragg Reflector Lasers with Hybrid Beam/Vapour Epitaxial Growth

Abstract

Keywords

ASJC Scopus subject areas

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