We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (a ~ 2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.
- Semiconductor lasers
ASJC Scopus subject areas
- Electrical and Electronic Engineering