Wavelength-independent optical lithography

S. Pau; O. Nalamasu; R. Cirelli; J. Frackoviak; A. Timko; P. Watson; F. Klemens; G. Timp

doi:10.1116/1.591192

Wavelength-independent optical lithography

S. Pau, O. Nalamasu, R. Cirelli, J. Frackoviak, A. Timko, P. Watson, F. Klemens, G. Timp

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A multiple exposure photolithographic technique is presented. The resolution of the technique is limited not by exposure wavelength but by processing. This optical lithography was implemented by multiple exposures with two etchings and with single etching. The resulting positive resists started with a bare wafer with a 1000 A oxide atop. The wafer was coated with resist and was exposed to the first mask. Plasma etching was applied twice until the final pattern was achieved.

Original language	English (US)
Pages (from-to)	317-320
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	18
Issue number	1
DOIs	https://doi.org/10.1116/1.591192
State	Published - Jan 2000

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Wavelength-independent optical lithography",

abstract = "A multiple exposure photolithographic technique is presented. The resolution of the technique is limited not by exposure wavelength but by processing. This optical lithography was implemented by multiple exposures with two etchings and with single etching. The resulting positive resists started with a bare wafer with a 1000 A oxide atop. The wafer was coated with resist and was exposed to the first mask. Plasma etching was applied twice until the final pattern was achieved.",

author = "S. Pau and O. Nalamasu and R. Cirelli and J. Frackoviak and A. Timko and P. Watson and F. Klemens and G. Timp",

year = "2000",

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T1 - Wavelength-independent optical lithography

AU - Pau, S.

AU - Nalamasu, O.

AU - Cirelli, R.

AU - Frackoviak, J.

AU - Timko, A.

AU - Watson, P.

AU - Klemens, F.

AU - Timp, G.

PY - 2000/1

Y1 - 2000/1

N2 - A multiple exposure photolithographic technique is presented. The resolution of the technique is limited not by exposure wavelength but by processing. This optical lithography was implemented by multiple exposures with two etchings and with single etching. The resulting positive resists started with a bare wafer with a 1000 A oxide atop. The wafer was coated with resist and was exposed to the first mask. Plasma etching was applied twice until the final pattern was achieved.

AB - A multiple exposure photolithographic technique is presented. The resolution of the technique is limited not by exposure wavelength but by processing. This optical lithography was implemented by multiple exposures with two etchings and with single etching. The resulting positive resists started with a bare wafer with a 1000 A oxide atop. The wafer was coated with resist and was exposed to the first mask. Plasma etching was applied twice until the final pattern was achieved.

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JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 1

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Wavelength-independent optical lithography

Abstract

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