Abstract
Fourier transform infrared (FTIR) spectroscopy was used to investigate the effect of adding cosolvents (aliphatic C1 to C6 alcohols) and Si-bearing precursors hexamethyldisilazane (HMDS) and trimethylchlorosilane (TMCS) to supercritical carbon dioxide (scCO 2) to dry and repair ashed blanket porous ultra low-k (ULK) methyl silsesquioxane (MSQ) films (JSR LKD5109) (k = 2.4). The drying results showed that all of the aliphatic C1-C6 alcohols removed hydrogen-bonded water. The film repair results indicated that HMDS and TMCS reacted with both lone (SiO-H) and H-bonded silanol (SiO-H) groups. The hydrophobicity of the starting surface before ashing was recovered after HMDS and TMCS treatments as confirmed by contact angle measurements (≥84°). Electrical performance was also restored based on dielectric constant values of 2.4 ± 0.1. HMDS and TMCS treatments are an effective approach to restore the degradation of ULK MSQ films due to plasma ashing.
| Original language | English (US) |
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| Pages | 279-288 |
| Number of pages | 10 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003 |
Other
| Other | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium |
|---|---|
| Country/Territory | United States |
| City | Orlando, FL. |
| Period | 10/12/03 → 10/17/03 |
ASJC Scopus subject areas
- General Engineering