Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions

Meng Xu; Mingen Li; Pravin Khanal; Ali Habiboglu; Blake Insana; Yuzan Xiong; Thomas Peterson; Jason C. Myers; Deborah Ortega; Hongwei Qu; C. L. Chien; Wei Zhang; Jian Ping Wang; W. G. Wang

doi:10.1103/PhysRevLett.124.187701

Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions

Meng Xu, Mingen Li, Pravin Khanal, Ali Habiboglu, Blake Insana, Yuzan Xiong, Thomas Peterson, Jason C. Myers, Deborah Ortega, Hongwei Qu, C. L. Chien, Wei Zhang, Jian Ping Wang, W. G. Wang

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

Original language	English (US)
Article number	187701
Journal	Physical review letters
Volume	124
Issue number	18
DOIs	https://doi.org/10.1103/PhysRevLett.124.187701
State	Published - May 8 2020
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.124.187701

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title = "Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions",

abstract = "We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.",

author = "Meng Xu and Mingen Li and Pravin Khanal and Ali Habiboglu and Blake Insana and Yuzan Xiong and Thomas Peterson and Myers, {Jason C.} and Deborah Ortega and Hongwei Qu and Chien, {C. L.} and Wei Zhang and Wang, {Jian Ping} and Wang, {W. G.}",

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T1 - Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions

AU - Xu, Meng

AU - Li, Mingen

AU - Khanal, Pravin

AU - Habiboglu, Ali

AU - Insana, Blake

AU - Xiong, Yuzan

AU - Peterson, Thomas

AU - Myers, Jason C.

AU - Ortega, Deborah

AU - Qu, Hongwei

AU - Chien, C. L.

AU - Zhang, Wei

AU - Wang, Jian Ping

AU - Wang, W. G.

PY - 2020/5/8

Y1 - 2020/5/8

N2 - We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

AB - We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferromagnetism, giant tunneling magnetoresistance, and sharp switching of the perpendicularly magnetized CoFeB allows sensitive detection of the exchange bias. We find that the exchange bias field can be isothermally controlled by magnetic fields at low temperatures. More importantly, the exchange bias can also be effectively manipulated by the electric field applied to the MgO barrier due to the voltage-controlled antiferromagnetic anisotropy in this system.

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Voltage-Controlled Antiferromagnetism in Magnetic Tunnel Junctions

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