Viewing asperity behavior under the wafer during CMP

Caprice Gray; Daniel Apone; Chris Rogers; Vincent P. Manno; Chris Barns; Mansour Moinpour; Sriram Anjur; Ara Philipossian

doi:10.1149/1.1887193

Viewing asperity behavior under the wafer during CMP

Caprice Gray, Daniel Apone, Chris Rogers, Vincent P. Manno, Chris Barns, Mansour Moinpour, Sriram Anjur, Ara Philipossian

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Recent experimental advances using dual emission laser induced fluorescence and image processing have provided high spatial and temporal resolution maps of the slurry layer during chemical mechanical polishing (CMP). Intensity differences in the images correspond to fluid layer thickness variations as the slurry passes between different pad and wafer topographies. Asperities expand under 14 μm deep wells and are compressed beyond the trailing edge of the wells. Air pockets travel from the leading to the trailing edge of the wafer through 27 μm deep wells. The pads tested were Freudenberg FX9, Rodel IC1000, and experimental pads from Cabot Microelectronics.

Original language	English (US)
Pages (from-to)	G109-G111
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	5
DOIs	https://doi.org/10.1149/1.1887193
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.1887193

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abstract = "Recent experimental advances using dual emission laser induced fluorescence and image processing have provided high spatial and temporal resolution maps of the slurry layer during chemical mechanical polishing (CMP). Intensity differences in the images correspond to fluid layer thickness variations as the slurry passes between different pad and wafer topographies. Asperities expand under 14 μm deep wells and are compressed beyond the trailing edge of the wells. Air pockets travel from the leading to the trailing edge of the wafer through 27 μm deep wells. The pads tested were Freudenberg FX9, Rodel IC1000, and experimental pads from Cabot Microelectronics.",

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AU - Gray, Caprice

AU - Apone, Daniel

AU - Rogers, Chris

AU - Manno, Vincent P.

AU - Barns, Chris

AU - Moinpour, Mansour

AU - Anjur, Sriram

AU - Philipossian, Ara

PY - 2005

Y1 - 2005

N2 - Recent experimental advances using dual emission laser induced fluorescence and image processing have provided high spatial and temporal resolution maps of the slurry layer during chemical mechanical polishing (CMP). Intensity differences in the images correspond to fluid layer thickness variations as the slurry passes between different pad and wafer topographies. Asperities expand under 14 μm deep wells and are compressed beyond the trailing edge of the wells. Air pockets travel from the leading to the trailing edge of the wafer through 27 μm deep wells. The pads tested were Freudenberg FX9, Rodel IC1000, and experimental pads from Cabot Microelectronics.

AB - Recent experimental advances using dual emission laser induced fluorescence and image processing have provided high spatial and temporal resolution maps of the slurry layer during chemical mechanical polishing (CMP). Intensity differences in the images correspond to fluid layer thickness variations as the slurry passes between different pad and wafer topographies. Asperities expand under 14 μm deep wells and are compressed beyond the trailing edge of the wells. Air pockets travel from the leading to the trailing edge of the wafer through 27 μm deep wells. The pads tested were Freudenberg FX9, Rodel IC1000, and experimental pads from Cabot Microelectronics.

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JF - Electrochemical and Solid-State Letters

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Viewing asperity behavior under the wafer during CMP

Abstract

ASJC Scopus subject areas

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