Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa; W. T. Tsang; R. A. Logan; R. P. Gnall; U. Keren; T. L. Koch; C. A. Burrus; M. C. Wu; Y. K. Chen; P. F. Sciortino; A. M. Sergent; P. J. Corvini

doi:10.1049/el:19920636

Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa
, W. T. Tsang
, R. A. Logan
, R. P. Gnall
, U. Keren
, T. L. Koch
, C. A. Burrus
, M. C. Wu
, Y. K. Chen
, P. F. Sciortino
, A. M. Sergent
, P. J. Corvini

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1049/el:19920636
State	Published - May 21 1992
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19920636

Cite this

@article{1dae0f73523048a490995c96c226acf5,

title = "Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy",

abstract = "The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.",

keywords = "Lasers, Semiconductor lasers",

author = "Choa, \{F. S.\} and Tsang, \{W. T.\} and Logan, \{R. A.\} and Gnall, \{R. P.\} and U. Keren and Koch, \{T. L.\} and Burrus, \{C. A.\} and Wu, \{M. C.\} and Chen, \{Y. K.\} and Sciortino, \{P. F.\} and Sergent, \{A. M.\} and Corvini, \{P. J.\}",

year = "1992",

month = may,

day = "21",

doi = "10.1049/el:19920636",

language = "English (US)",

volume = "28",

pages = "1001--1002",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

number = "11",

}

TY - JOUR

T1 - Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

AU - Choa, F. S.

AU - Tsang, W. T.

AU - Logan, R. A.

AU - Gnall, R. P.

AU - Keren, U.

AU - Koch, T. L.

AU - Burrus, C. A.

AU - Wu, M. C.

AU - Chen, Y. K.

AU - Sciortino, P. F.

AU - Sergent, A. M.

AU - Corvini, P. J.

PY - 1992/5/21

Y1 - 1992/5/21

N2 - The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

AB - The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

KW - Lasers

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0026869079

UR - https://www.scopus.com/pages/publications/0026869079#tab=citedBy

U2 - 10.1049/el:19920636

DO - 10.1049/el:19920636

M3 - Article

AN - SCOPUS:0026869079

SN - 0013-5194

VL - 28

SP - 1001

EP - 1002

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this