Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa; W. T. Tsang; R. A. Logan; R. P. Gnall; U. Keren; T. L. Koch; C. A. Burrus; M. C. Wu; Y. K. Chen; P. F. Sciortino; A. M. Sergent; P. J. Corvini

doi:10.1049/el:19920636

Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

F. S. Choa, W. T. Tsang, R. A. Logan, R. P. Gnall, U. Keren, T. L. Koch, C. A. Burrus, M. C. Wu, Y. K. Chen, P. F. Sciortino, A. M. Sergent, P. J. Corvini

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

Original language	English (US)
Pages (from-to)	1001-1002
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1049/el:19920636
State	Published - May 21 1992
Externally published	Yes

Keywords

Lasers
Semiconductor lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19920636

Cite this

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title = "Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy",

abstract = "The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.",

keywords = "Lasers, Semiconductor lasers",

author = "Choa, {F. S.} and Tsang, {W. T.} and Logan, {R. A.} and Gnall, {R. P.} and U. Keren and Koch, {T. L.} and Burrus, {C. A.} and Wu, {M. C.} and Chen, {Y. K.} and Sciortino, {P. F.} and Sergent, {A. M.} and Corvini, {P. J.}",

year = "1992",

month = may,

day = "21",

doi = "10.1049/el:19920636",

language = "English (US)",

volume = "28",

pages = "1001--1002",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

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TY - JOUR

T1 - Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

AU - Choa, F. S.

AU - Tsang, W. T.

AU - Logan, R. A.

AU - Gnall, R. P.

AU - Keren, U.

AU - Koch, T. L.

AU - Burrus, C. A.

AU - Wu, M. C.

AU - Chen, Y. K.

AU - Sciortino, P. F.

AU - Sergent, A. M.

AU - Corvini, P. J.

PY - 1992/5/21

Y1 - 1992/5/21

N2 - The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

AB - The fabrication and performance of InGaAs/InGaAsP multiquantum well distributed-Bragg-reflector lasers grown by chemical beam epitaxy are reported. Use of a long and weak grating, which was made on a thin and uniformly grown quaternary layer, has enabled the grating coupling constant κ to be well controlled. For most of the lasers the measured linewidths are below 10 MHz. A record high sidemode suppression ratio of 58·5 dB was obtained.

KW - Lasers

KW - Semiconductor lasers

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M3 - Article

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JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Very high sidemode-suppression-ratio distributed-bragg-reflector lasers grown by chemical beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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