VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

Armis R. Zakharian; J. Hader; J. V. Moloney; S. W. Koch

doi:10.1109/LPT.2005.858087

VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

Armis R. Zakharian
, J. Hader
, J. V. Moloney
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN² + CN³ model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

Original language	English (US)
Pages (from-to)	2511-2513
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	12
DOIs	https://doi.org/10.1109/LPT.2005.858087
State	Published - Dec 2005

Keywords

Auger recombination
Optically pumped laser
Semiconductor microcavity
Vertical-external-cavity surface-emitting laser (VECSEL)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2005.858087

Cite this

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title = "VECSEL threshold and output power-shutoff dependence on the carrier recombination rates",

abstract = "We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.",

keywords = "Auger recombination, Optically pumped laser, Semiconductor microcavity, Vertical-external-cavity surface-emitting laser (VECSEL)",

author = "Zakharian, \{Armis R.\} and J. Hader and Moloney, \{J. V.\} and Koch, \{S. W.\}",

note = "Funding Information: Manuscript received June 9, 2005; revised August 14, 2005. This work was supported by the Air Force Office of Scientific Research (AFOSR) under Contract F49620-02-1-0380, Contract FA9550-04-1-0213, and Contract FA9550-04-1-0355, and by the Deutsche Forschungsgemeinschaft.",

year = "2005",

month = dec,

doi = "10.1109/LPT.2005.858087",

language = "English (US)",

volume = "17",

pages = "2511--2513",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

AU - Zakharian, Armis R.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

N1 - Funding Information: Manuscript received June 9, 2005; revised August 14, 2005. This work was supported by the Air Force Office of Scientific Research (AFOSR) under Contract F49620-02-1-0380, Contract FA9550-04-1-0213, and Contract FA9550-04-1-0355, and by the Deutsche Forschungsgemeinschaft.

PY - 2005/12

Y1 - 2005/12

N2 - We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

AB - We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.

KW - Auger recombination

KW - Optically pumped laser

KW - Semiconductor microcavity

KW - Vertical-external-cavity surface-emitting laser (VECSEL)

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U2 - 10.1109/LPT.2005.858087

DO - 10.1109/LPT.2005.858087

M3 - Article

AN - SCOPUS:29244448674

SN - 1041-1135

VL - 17

SP - 2511

EP - 2513

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

VECSEL threshold and output power-shutoff dependence on the carrier recombination rates

Abstract

Keywords

ASJC Scopus subject areas

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