Abstract
We compute the lasing threshold and thermally driven power-shutoff characteristics of optically pumped vertical-external-cavity surface-emitting lasers. Using a quantitative numerical model, variations in the threshold and shutoff power levels are contrasted for the two approaches to the computation of the carrier recombination rates: using the AN + BN2 + CN3 model with the temperature and carrier density independent coefficients, versus using recombination rates precomputed within the framework of the microscopic many-body theory.
Original language | English (US) |
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Pages (from-to) | 2511-2513 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 17 |
Issue number | 12 |
DOIs | |
State | Published - Dec 2005 |
Keywords
- Auger recombination
- Optically pumped laser
- Semiconductor microcavity
- Vertical-external-cavity surface-emitting laser (VECSEL)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering