VECSEL subcavity design and optimization for targeted wavelengths

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Optically pumped semiconductor (OPS) vertical-external-cavity surface-emitting lasers (VECSELs) offer the first truly high-brightness high power laser sources with serious power scaling potential to multiple kW levels and flexible spectral coverage from IR to mid-IR. Due to the fact that the semiconductor chip (or subcavity) of a VECSEL serves as both the gain medium and a cavity mirror, the design and optimization of the semiconductor subcavity is key to achieve high power operation and consequently high power extraction via pump area scaling. A fundamental microscopic quantum design approach, allowing for calculating the electro-optical properties of QWs such as the optical gain/absorption and carrier recombination rates, is combined with a coupled optical-thermal-carrier analysis scheme to design and optimize VECSEL chips for wavelengths in the IR. We will describe the design and optimization procedure and present simulation results on VECSEL chips at wavelengths of 980 nm, 1178 nm, and 2 μm.

Original languageEnglish (US)
Title of host publicationSolid State Lasers XVII
Subtitle of host publicationTechnology and Devices
StatePublished - 2008
EventSolid State Lasers XVII: Technology and Devices - San Jose, CA, United States
Duration: Jan 20 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherSolid State Lasers XVII: Technology and Devices
Country/TerritoryUnited States
CitySan Jose, CA


  • Optically pumped semiconductor laser (OPSL)
  • Semiconductor subcavity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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