Abstract
The generation of mode-locked pulses in vertical external-cavity surface-emitting lasers with a semiconductor saturable absorber mirror is studied by numerically solving the Maxwell semiconductor Bloch equations describing the propagating light field coupled to the electron-hole-pair excitations in the quantum wells. High peak-power sub-100 fs mode-locked pulses are realized through optimizing the gain chip design. The unequal spacing of up to four quantum wells in a given field antinode leads to a broad linear gain profile and reduced intracavity dispersion. The proposed designs are found to be robust with regard to uncontrollable growth uncertainties.
| Original language | English (US) |
|---|---|
| Article number | 262105 |
| Journal | Applied Physics Letters |
| Volume | 112 |
| Issue number | 26 |
| DOIs | |
| State | Published - Jun 25 2018 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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