TY - JOUR
T1 - Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2
T2 - Morphology and growth modes
AU - Schlaf, R.
AU - Armstrong, N. R.
AU - Parkinson, B. A.
AU - Pettenkofer, C.
AU - Jaegermann, W.
N1 - Funding Information:
Part of the work was supported by the BMFT, Germany. RS would like to thank the DAAD, Germany for providing a fellowship [DAAD-Kurzstipendium (HSPII/AUFE); Kennziffer 5164028303] that made the research stays in Fort Collins and Tucson possible. We are also grateful to H. Sehnert, K. Nebesny and P. Lee for technical support, to Y. Tomm for substrate crystals, to T. Löher, A. Klein, O. Lang and S. Tiefenbacher for helpful discussions and to D. Soltz for reading the manuscript.
PY - 1997/8/1
Y1 - 1997/8/1
N2 - The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.
AB - The recent development of so-called van der Waals epitaxy offers a whole new variety of material combinations for semiconductor heterojunctions. In this paper we investigate the morphology and the growth modes of the layered semiconductors SnSe2 (Eg = 1.03 eV) and SnS2 (Eg = 2.18 eV) on a variety of layered single crystalline substrate materials (highly oriented pyrolytic graphite, MoTe2, MoS2, WSe2, GaSe, SnS2 and SnSe2). The growth modes were investigated by low energy electron diffraction, photoemission spectroscopy and scanning tunnelling microscopy. We found that both of the materials grow in a two-dimensional layer-by-layer fashion with three-dimensional nucleation. However, despite the strong similarities of both of the materials the results indicate that SnS2 grows in a more ideal layer-by-layer mode than SnSe2. This is attributed to different surface diffusion rates due to different growth temperatures. The difference in empirically determined optimized growth temperatures are explained by the different thermal stabilities of the materials.
KW - Growth modes
KW - Layered chalcogenides
KW - Low energy electron diffraction
KW - Molecular beam epitaxy
KW - Photoelectron spectroscopy
KW - Scanning tunnelling microscopy
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U2 - 10.1016/S0039-6028(97)00066-6
DO - 10.1016/S0039-6028(97)00066-6
M3 - Article
AN - SCOPUS:0031212074
SN - 0039-6028
VL - 385
SP - 1
EP - 14
JO - Surface Science
JF - Surface Science
IS - 1
ER -