Uv activated surface preparation of silicon for high-k dielectric deposition

Material Science

• Film 100%
• Silicon 100%
• Oxide Compound 100%
• Dielectric Material 100%
• Photoemission Spectroscopy 100%
• Nucleation 50%
• Activation Energy 50%
• Monolayers 50%
• Permittivity 50%
• Silicon Nitride 50%
• Lamp 50%
• Nitriding 50%

Keyphrases

• Activated Surface 100%
• Dielectric Deposition 100%
• High-k Metal Gate 33%
• Overall Activation Energy 33%
• Si(100) Surface 33%
• Interfacial Oxide 33%
• Surface Hydroxyl Groups 33%