UV activated surface preparation of silicon for high-k dielectric deposition

Engineering & Materials Science

• Activation energy 16%
• Amines 56%
• Atoms 49%
• Chlorine 19%
• Contamination 15%
• Diffusion barriers 23%
• Electric lamps 17%
• Energy barriers 24%
• Fluxes 12%
• Gases 9%
• Gate dielectrics 22%
• High-k dielectric 100%
• Hydrogen 12%
• Molecules 15%
• Monolayers 20%
• Nitridation 24%
• Nucleation 16%
• Oxides 27%
• Oxygen 12%
• Permittivity 15%
• Photoelectron spectroscopy 54%
• Photons 37%
• Seed 16%
• Silicon 49%
• Silicon nitride 19%
• Temperature 6%
• X rays 28%

Physics & Astronomy

• activation energy 11%
• amines 56%
• atoms 24%
• chlorine 16%
• contamination 14%
• energy 4%
• gases 8%
• hydrogen 9%
• luminaires 14%
• molecules 8%
• nucleation 11%
• oxides 19%
• oxygen 9%
• permittivity 11%
• photoelectron spectroscopy 26%
• photons 17%
• preparation 46%
• seeds 14%
• silicon 34%
• silicon nitrides 15%
• x ray spectroscopy 32%

Chemical Compounds

• Amine 30%
• Chlorine 13%
• Dielectric Material 56%
• Diffusion Barrier 19%
• Dioxygen 7%
• Energy 7%
• Energy Barrier 15%
• Gas 8%
• Hydrogen 8%
• Liquid Film 15%
• Molecule 5%
• Monolayer 11%
• Nitride 15%
• Nucleation 13%
• Oxide 17%
• Permittivity 17%
• Photoelectron Spectroscopy 31%
• Photon 30%
• Reaction Activation Energy 10%
• Surface 20%
• Time 5%