Using ion implantation for figure correction in glass and silicon mirror substrates for X-ray telescopes

Brandon Chalifoux, Claire Burch, Ralf K. Heilmann, Youwei Yao, Heng E. Zuo, Mark L. Schattenburg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Ion implantation is a method of correcting figure errors in thin silicon or glass substrates. For future high-resolution, highthroughput X-ray observatories, such figure correction may be critical for thin mirror substrates. Ion implantation into both glass and silicon results in surface stress, which bends the substrate. We demonstrate that this stress may be used to improve the surface figure of flat glass wafers. We then describe three effects of ion implantation in glass and silicon. The first effect is the stress resulting from the implanted ions, and the implications for figure correction with each material. Second, each material studied also shows some relaxation after the ion beam is removed; we report on the magnitude of this relaxation and its implications. Finally, the surface stress may affect the strength of implanted materials. We report on ring-on-ring strength tests conducted on implanted glass samples.

Original languageEnglish (US)
Title of host publicationOptics for EUV, X-Ray, and Gamma-Ray Astronomy VIII
EditorsStephen L. O'Dell, Giovanni Pareschi
PublisherSPIE
ISBN (Electronic)9781510612556
DOIs
StatePublished - 2017
Externally publishedYes
EventOptics for EUV, X-Ray, and Gamma-Ray Astronomy VIII 2017 - San Diego, United States
Duration: Aug 8 2017Aug 10 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10399
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOptics for EUV, X-Ray, and Gamma-Ray Astronomy VIII 2017
Country/TerritoryUnited States
CitySan Diego
Period8/8/178/10/17

Keywords

  • X-Ray telescope mirrors
  • figure correction
  • glass
  • ion implantation
  • silicon

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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