Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

S. S. Tarng; H. M. Gibbs; J. L. Jewell; N. Peyghambarian; A. C. Gossard; T. Venkatesan; W. Wiegmann

doi:10.1063/1.94775

Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

S. S. Tarng, H. M. Gibbs, J. L. Jewell, N. Peyghambarian, A. C. Gossard, T. Venkatesan, W. Wiegmann

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.

Original language	English (US)
Pages (from-to)	360-361
Number of pages	2
Journal	Applied Physics Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1063/1.94775
State	Published - 1984

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{0176809f89a5407f8109dac2fe5ca0a0,

title = "Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon",

abstract = "Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.",

author = "Tarng, {S. S.} and Gibbs, {H. M.} and Jewell, {J. L.} and N. Peyghambarian and Gossard, {A. C.} and T. Venkatesan and W. Wiegmann",

year = "1984",

doi = "10.1063/1.94775",

language = "English (US)",

volume = "44",

pages = "360--361",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

AU - Tarng, S. S.

AU - Gibbs, H. M.

AU - Jewell, J. L.

AU - Peyghambarian, N.

AU - Gossard, A. C.

AU - Venkatesan, T.

AU - Wiegmann, W.

PY - 1984

Y1 - 1984

N2 - Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.

AB - Optical bistability is observed using a single-mode diode laser in a GaAs-AlGaAs multiple-quantum-well etalon with as low as six mW power at 830 nm.

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UR - http://www.scopus.com/inward/citedby.url?scp=0021373189&partnerID=8YFLogxK

U2 - 10.1063/1.94775

DO - 10.1063/1.94775

M3 - Article

AN - SCOPUS:0021373189

SN - 0003-6951

VL - 44

SP - 360

EP - 361

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon

Abstract

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