Ultrafast transient gain in type II multiple quantum wells

G. Mohs; B. Fluegel; H. Giessen; K. Meissner; G. Khitrova; H. Gibbs; N. Peyghambarian

doi:10.1063/1.116383

Ultrafast transient gain in type II multiple quantum wells

G. Mohs
, B. Fluegel
, H. Giessen
, K. Meissner
, G. Khitrova
, H. Gibbs
, N. Peyghambarian

Research output: Contribution to journal › Review article › peer-review

1 Scopus citations

Abstract

Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.

Original language	English (US)
Pages (from-to)	511-513
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	4
DOIs	https://doi.org/10.1063/1.116383
State	Published - 1996

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116383

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title = "Ultrafast transient gain in type II multiple quantum wells",

abstract = "Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.",

author = "G. Mohs and B. Fluegel and H. Giessen and K. Meissner and G. Khitrova and H. Gibbs and N. Peyghambarian",

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T1 - Ultrafast transient gain in type II multiple quantum wells

AU - Mohs, G.

AU - Fluegel, B.

AU - Giessen, H.

AU - Meissner, K.

AU - Khitrova, G.

AU - Gibbs, H.

AU - Peyghambarian, N.

PY - 1996

Y1 - 1996

N2 - Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.

AB - Gain for less than one picosecond is observed in a type II GaAs/AlAs multiple quantum well and compared to a type I multiple quantum well under the same conditions. A sophisticated three-beam experiment is used to unambiguously determine the internal gain of the samples. This method is capable of measuring very small amounts of gain and applicable to a wide variety of situations. The observations are well explained by a simple carrier scattering model.

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U2 - 10.1063/1.116383

DO - 10.1063/1.116383

M3 - Review article

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VL - 68

SP - 511

EP - 513

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

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Ultrafast transient gain in type II multiple quantum wells

Abstract

ASJC Scopus subject areas

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