Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

R. H. Moyer; P. Agmon; T. L. Koch; A. Yariv

doi:10.1063/1.92667

Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

R. H. Moyer, P. Agmon, T. L. Koch, A. Yariv

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.

Original language	English (US)
Pages (from-to)	266-268
Number of pages	3
Journal	Applied Physics Letters
Volume	39
Issue number	3
DOIs	https://doi.org/10.1063/1.92667
State	Published - 1981
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide",

abstract = "The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.",

author = "Moyer, {R. H.} and P. Agmon and Koch, {T. L.} and A. Yariv",

year = "1981",

doi = "10.1063/1.92667",

language = "English (US)",

volume = "39",

pages = "266--268",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

AU - Moyer, R. H.

AU - Agmon, P.

AU - Koch, T. L.

AU - Yariv, A.

PY - 1981

Y1 - 1981

N2 - The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.

AB - The speed of opto-electronic switches is increased or decreased by the application of a magnetic field. This is achieved by inducing a carrier drift toward or away from the semiconductor surface, resulting in the enhancement or suppression of surface recombination. We establish that surface recombination plays a major role in determining the speed of the opto-electronic switch.

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DO - 10.1063/1.92667

M3 - Article

AN - SCOPUS:0042745128

SN - 0003-6951

VL - 39

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EP - 268

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Ultrafast magnetophotoconductivity of semi-insulating gallium arsenide

Abstract

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