Ultrafast electron and hole tunneling in (Ga,In)As/(Al,In)As asymmetric double quantum wells

S. Ten, M. F. Krol, P. T. Guerreiro, N. Peyghambarian

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We present unambiguous experimental evidence for the dramatic dependence of hole tunneling rates on in-plane momentum in (Ga,In)As/(Al,In)As asymmetric double quantum wells. Holes generated near the band edge tunnel on hundred picosecond time scales, whereas holes excited with large excess energy tunnel on subpicosecond time scales. The mechanism responsible for this increase of more than three orders of magnitude in the hole tunneling rate is nonresonant delocalization of hole wave functions by band mixing in the valence band.

Original languageEnglish (US)
Pages (from-to)3387-3389
Number of pages3
JournalApplied Physics Letters
Issue number22
StatePublished - Nov 25 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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