Ultrafast dephasing through acoustic plasmon undamping in nonequilibrium electron-hole plasmas

D. C. Scott; R. Binder; S. W. Koch

doi:10.1103/PhysRevLett.69.347

Ultrafast dephasing through acoustic plasmon undamping in nonequilibrium electron-hole plasmas

D. C. Scott, R. Binder, S. W. Koch

Research output: Contribution to journal › Article › peer-review

58 Scopus citations

Abstract

Strong enhancement of acoustic plasmons in optically excited nonequilibrium electron-hole plasmas in bulk semiconductors is shown to cause ultrashort (10 fs) dephasing times and very high carrier-carrier scattering rates.

Original language	English (US)
Pages (from-to)	347-350
Number of pages	4
Journal	Physical review letters
Volume	69
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.69.347
State	Published - 1992

ASJC Scopus subject areas

General Physics and Astronomy

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10.1103/PhysRevLett.69.347

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title = "Ultrafast dephasing through acoustic plasmon undamping in nonequilibrium electron-hole plasmas",

abstract = "Strong enhancement of acoustic plasmons in optically excited nonequilibrium electron-hole plasmas in bulk semiconductors is shown to cause ultrashort (10 fs) dephasing times and very high carrier-carrier scattering rates.",

author = "Scott, {D. C.} and R. Binder and Koch, {S. W.}",

year = "1992",

doi = "10.1103/PhysRevLett.69.347",

language = "English (US)",

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AU - Scott, D. C.

AU - Binder, R.

AU - Koch, S. W.

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N2 - Strong enhancement of acoustic plasmons in optically excited nonequilibrium electron-hole plasmas in bulk semiconductors is shown to cause ultrashort (10 fs) dephasing times and very high carrier-carrier scattering rates.

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Ultrafast dephasing through acoustic plasmon undamping in nonequilibrium electron-hole plasmas

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