Abstract
An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 327-334 |
| Number of pages | 8 |
| Journal | IEEE Transactions on Plasma Science |
| Volume | 25 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1997 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Condensed Matter Physics
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