Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

Jon S.H. Schoenberg; Jeffrey W. Burger; J. Scott Tyo; Michael D. Abdalla; Michael C. Skipper; Walter R. Buchwald

doi:10.1109/27.602507

Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

Jon S.H. Schoenberg, Jeffrey W. Burger, J. Scott Tyo, Michael D. Abdalla, Michael C. Skipper, Walter R. Buchwald

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

107 Scopus citations

Abstract

An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.

Original language	English (US)
Pages (from-to)	327-334
Number of pages	8
Journal	IEEE Transactions on Plasma Science
Volume	25
Issue number	2
DOIs	https://doi.org/10.1109/27.602507
State	Published - 1997

ASJC Scopus subject areas

Nuclear and High Energy Physics
Condensed Matter Physics

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10.1109/27.602507

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title = "Ultra-wideband source using gallium arsenide photoconductive semiconductor switches",

abstract = "An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.",

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T1 - Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

AU - Schoenberg, Jon S.H.

AU - Burger, Jeffrey W.

AU - Scott Tyo, J.

AU - Abdalla, Michael D.

AU - Skipper, Michael C.

AU - Buchwald, Walter R.

PY - 1997

Y1 - 1997

N2 - An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.

AB - An ultrawide-band (UWB) pulse generator based on high-gain (lock-on mode) gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS's) is presented. Revised PCSS contact design shows improved performance in hold-off field, on-state switch potential, and switching jitter, while reducing the switch volume by 75% compared to previous designs. A compact laser diode module operates at 904 nm and triggers the PCSS at pulse repetition rates (PRR) of up to 2 kHz. The 625 W laser diode output power is found to be sufficient to produce switching jitter of 65 ps rms at a switched field of 80 kV/cm. The PCSS switching jitter is found to have a strong dependence upon the switched field when triggered with the laser diode module. The revised PCSS geometry is easily integrated into a compact, parallel-plate source used to drive a TEM horn impulse-radiating antenna (IRA). The radiated field has a rise time of 330 ps and an adjustable low-frequency spectrum.

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JO - IEEE Transactions on Plasma Science

JF - IEEE Transactions on Plasma Science

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Ultra-wideband source using gallium arsenide photoconductive semiconductor switches

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