Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

C. Möller; C. Fuchs; C. Berger; A. Ruiz Perez; M. Koch; J. Hader; J. V. Moloney; S. W. Koch; W. Stolz

doi:10.1063/1.4942103

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

C. Möller, C. Fuchs, C. Berger, A. Ruiz Perez, M. Koch, J. Hader, J. V. Moloney, S. W. Koch, W. Stolz

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten "W"-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

Original language	English (US)
Article number	071102
Journal	Applied Physics Letters
Volume	108
Issue number	7
DOIs	https://doi.org/10.1063/1.4942103
State	Published - Feb 15 2016
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4942103

Cite this

@article{a3b01f3c5a3542e9a42c9d88bb8095b5,

title = "Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m",

abstract = "Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten {"}W{"}-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.",

author = "C. M{\"o}ller and C. Fuchs and C. Berger and {Ruiz Perez}, A. and M. Koch and J. Hader and Moloney, {J. V.} and Koch, {S. W.} and W. Stolz",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = feb,

day = "15",

doi = "10.1063/1.4942103",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

AU - Möller, C.

AU - Fuchs, C.

AU - Berger, C.

AU - Ruiz Perez, A.

AU - Koch, M.

AU - Hader, J.

AU - Moloney, J. V.

AU - Koch, S. W.

AU - Stolz, W.

PY - 2016/2/15

Y1 - 2016/2/15

N2 - Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten "W"-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

AB - Semiconductor laser characteristics based on type-II band-aligned quantum well heterostructures for the emission at 1.2 μm are presented. Ten "W"-quantum wells consisting of GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs are arranged as resonant periodic gain in a vertical-external-cavity surface-emitting laser. Its structure is analyzed by X-ray diffraction, photoluminescence, and reflectance measurements. The laser's power curves and spectra are investigated. Output powers at Watt level are achieved, with a maximum output power of 4 W. It is confirmed that laser operation only involves the type-II transition. A blue shift of the material gain is observed while the modal gain exhibits a red shift.

UR - http://www.scopus.com/inward/record.url?scp=84958824617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958824617&partnerID=8YFLogxK

U2 - 10.1063/1.4942103

DO - 10.1063/1.4942103

M3 - Article

AN - SCOPUS:84958824617

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071102

ER -

Type-II vertical-external-cavity surface-emitting laser with Watt level output powers at 1.2 μ m

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this