Abstract
Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.
Original language | English (US) |
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Article number | 081903 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 8 |
DOIs | |
State | Published - Feb 21 2005 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)