Type I-type II transition in InGaAs-GaNAs heterostructures

C. Schlichenmaier; H. Grüning; A. Thränhardt; P. J. Klar; B. Kunert; K. Volz; W. Stolz; W. Heimbrodt; T. Meier; S. W. Koch; J. Hader; J. V. Moloney

doi:10.1063/1.1870132

Type I-type II transition in InGaAs-GaNAs heterostructures

C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, J. V. Moloney

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15 Scopus citations

Abstract

Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.

Original language	English (US)
Article number	081903
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	8
DOIs	https://doi.org/10.1063/1.1870132
State	Published - Feb 21 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1870132

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title = "Type I-type II transition in InGaAs-GaNAs heterostructures",

abstract = "Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.",

author = "C. Schlichenmaier and H. Gr{\"u}ning and A. Thr{\"a}nhardt and Klar, {P. J.} and B. Kunert and K. Volz and W. Stolz and W. Heimbrodt and T. Meier and Koch, {S. W.} and J. Hader and Moloney, {J. V.}",

note = "Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomi{\'c} (Daresbury Laboratory) for fruitful discussions. ",

year = "2005",

month = feb,

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doi = "10.1063/1.1870132",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Type I-type II transition in InGaAs-GaNAs heterostructures

AU - Schlichenmaier, C.

AU - Grüning, H.

AU - Thränhardt, A.

AU - Klar, P. J.

AU - Kunert, B.

AU - Volz, K.

AU - Stolz, W.

AU - Heimbrodt, W.

AU - Meier, T.

AU - Koch, S. W.

AU - Hader, J.

AU - Moloney, J. V.

N1 - Funding Information: This work was supported by the Deutsche Forschungsgemeinschaft (Research Group on Metastable Compound Semiconductors and Heterostructures), by AFOSR (F49620-02-1-0380) and the Max-Planck Research Prize of the Max-Planck Society and Humboldt Foundation. We thank Stanko Tomić (Daresbury Laboratory) for fruitful discussions.

PY - 2005/2/21

Y1 - 2005/2/21

N2 - Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.

AB - Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.

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DO - 10.1063/1.1870132

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JF - Applied Physics Letters

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IS - 8

M1 - 081903

ER -

Type I-type II transition in InGaAs-GaNAs heterostructures

Abstract

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