Type I-type II transition in InGaAs-GaNAs heterostructures

C. Schlichenmaier, H. Grüning, A. Thränhardt, P. J. Klar, B. Kunert, K. Volz, W. Stolz, W. Heimbrodt, T. Meier, S. W. Koch, J. Hader, J. V. Moloney

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15 Scopus citations


Optical interband transitions in a series of In0.23 Ga0.77 As-Ga Nx As1-x quantum well samples are investigated. For changing nitrogen content, a type I-type II transition is identified by a detailed analysis of photoluminescence and photoreflectance spectra. Experimental results are compared systematically with spectra calculated by a microscopic theory. A valence band offset parameter of (1.5±0.5) eV is extracted for this heterostructure system.

Original languageEnglish (US)
Article number081903
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - Feb 21 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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