Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition

T. Moriyama; C. Ni; W. G. Wang; X. Zhang; John Q. Xiao

doi:10.1063/1.2207835

Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition

T. Moriyama, C. Ni, W. G. Wang, X. Zhang, John Q. Xiao

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering. FeCoMgOFeCo MTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without high temperature postannealing, whereas those MTJs on nonoriented buffer layers show 45% of TMR. The high-resolution transmission electron microscopy images reveal an excellent morphology and very coherent crystal structure with FeCo (001) [110] MgO (001) [100] FeCo (001) [110] orientation. The results indicate that high TMR can be achieved without high temperature postannealing by sputtering deposition on appropriate oriented buffer layers.

Original language	English (US)
Article number	222503
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2207835
State	Published - May 29 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition",

abstract = "Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering. FeCoMgOFeCo MTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without high temperature postannealing, whereas those MTJs on nonoriented buffer layers show 45% of TMR. The high-resolution transmission electron microscopy images reveal an excellent morphology and very coherent crystal structure with FeCo (001) [110] MgO (001) [100] FeCo (001) [110] orientation. The results indicate that high TMR can be achieved without high temperature postannealing by sputtering deposition on appropriate oriented buffer layers.",

author = "T. Moriyama and C. Ni and Wang, {W. G.} and X. Zhang and Xiao, {John Q.}",

note = "Funding Information: This work was supported by NSF DMR Grant No. 0405-136.",

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T1 - Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition

AU - Moriyama, T.

AU - Ni, C.

AU - Wang, W. G.

AU - Zhang, X.

AU - Xiao, John Q.

N1 - Funding Information: This work was supported by NSF DMR Grant No. 0405-136.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering. FeCoMgOFeCo MTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without high temperature postannealing, whereas those MTJs on nonoriented buffer layers show 45% of TMR. The high-resolution transmission electron microscopy images reveal an excellent morphology and very coherent crystal structure with FeCo (001) [110] MgO (001) [100] FeCo (001) [110] orientation. The results indicate that high TMR can be achieved without high temperature postannealing by sputtering deposition on appropriate oriented buffer layers.

AB - Magnetic tunneling junctions (MTJs) with MgO tunnel barrier have been fabricated on both oriented and nonoriented buffer layers on Si(001) substrate by magnetron sputtering. FeCoMgOFeCo MTJs fabricated on oriented buffer layers show larger tunneling magnetoresistance (TMR) value up to 84% without high temperature postannealing, whereas those MTJs on nonoriented buffer layers show 45% of TMR. The high-resolution transmission electron microscopy images reveal an excellent morphology and very coherent crystal structure with FeCo (001) [110] MgO (001) [100] FeCo (001) [110] orientation. The results indicate that high TMR can be achieved without high temperature postannealing by sputtering deposition on appropriate oriented buffer layers.

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Tunneling magnetoresistance in (001)-oriented FeCoMgOFeCo magnetic tunneling junctions grown by sputtering deposition

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