Tunable high-power AIGaAs distributed Bragg reflector laser diodes

V. N. Gulgazov; H. Zhao; D. Nam; J. S. Major; T. L. Koch

doi:10.1049/el:19970007

Tunable high-power AIGaAs distributed Bragg reflector laser diodes

V. N. Gulgazov, H. Zhao, D. Nam, J. S. Major, T. L. Koch

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Power exceeding 200mW from high-power tunable distributed Bragg reflector (TDBR) lasers have been achieved. The low power consumption tuning mechanism is described, with a wavelength tuning of > 10nm. A 20000 h lifetest on DBR lasers is presented.

Original language	English (US)
Pages (from-to)	58-59
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1049/el:19970007
State	Published - Jan 2 1997
Externally published	Yes

Keywords

Aluminium gallium arsenide
Distributed Bragg reflector lasers
Semiconductor junction lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19970007

Cite this

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title = "Tunable high-power AIGaAs distributed Bragg reflector laser diodes",

abstract = "Power exceeding 200mW from high-power tunable distributed Bragg reflector (TDBR) lasers have been achieved. The low power consumption tuning mechanism is described, with a wavelength tuning of > 10nm. A 20000 h lifetest on DBR lasers is presented.",

keywords = "Aluminium gallium arsenide, Distributed Bragg reflector lasers, Semiconductor junction lasers",

author = "Gulgazov, {V. N.} and H. Zhao and D. Nam and Major, {J. S.} and Koch, {T. L.}",

year = "1997",

month = jan,

day = "2",

doi = "10.1049/el:19970007",

language = "English (US)",

volume = "33",

pages = "58--59",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley & Sons Inc.",

number = "1",

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TY - JOUR

T1 - Tunable high-power AIGaAs distributed Bragg reflector laser diodes

AU - Gulgazov, V. N.

AU - Zhao, H.

AU - Nam, D.

AU - Major, J. S.

AU - Koch, T. L.

PY - 1997/1/2

Y1 - 1997/1/2

N2 - Power exceeding 200mW from high-power tunable distributed Bragg reflector (TDBR) lasers have been achieved. The low power consumption tuning mechanism is described, with a wavelength tuning of > 10nm. A 20000 h lifetest on DBR lasers is presented.

AB - Power exceeding 200mW from high-power tunable distributed Bragg reflector (TDBR) lasers have been achieved. The low power consumption tuning mechanism is described, with a wavelength tuning of > 10nm. A 20000 h lifetest on DBR lasers is presented.

KW - Aluminium gallium arsenide

KW - Distributed Bragg reflector lasers

KW - Semiconductor junction lasers

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DO - 10.1049/el:19970007

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JO - Electronics Letters

JF - Electronics Letters

IS - 1

ER -

Tunable high-power AIGaAs distributed Bragg reflector laser diodes

Abstract

Keywords

ASJC Scopus subject areas

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