Abstract
A monolithically frequency-stabilized 670-nm laser diode was described. The device has good power output and efficiency and can be thermally tuned with current injected into the grating region. The gain material consisted of strained InGaP quantum wells. A grating layer was then grown in the first epitaxial step just above the waveguide and holographic lithography was used to define a second-order grating only in the regions used for the rear mirror. Narrow index-guided single mode devices were then fabricated with two separate contacts on both the grating and the gain regions. The turn-on voltage was below 2 volts and the series resistance was about 3.4 Ohms with linear current-voltage characteristics. The thermal time constant was 10-50 μs.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 337-338 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| Volume | 11 |
| State | Published - 1997 |
| Event | Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Duration: May 18 1997 → May 23 1997 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering