Abstract
Novel non-porous pads incorporating different amounts of embedded water soluble particles (WSP) have been characterized and compared to a conventional porous pad for interlayer dielectric (ILD) chemical mechanical planarization (CMP) applications. Removal rate results indicated that polishing with WSP pads was Prestonian in nature (similar to conventional porous pads). A decrease in removal rate at high combinations of pressure and velocity was observed during in-situ conditioning with WSP pads. This anomalous behavior was most likely due to the alternatively feeding and starving the wafer of slurry during in-situ conditioning since doubling the flow rate resolved the problem. The anomalous behavior, however, was not observed when conditioning was performed ex-situ. Fractional analysis indicated that polishing with WSP pads proceeded via boundary lubrication like the other porous pads with concentrically grooved surface geometries.
Original language | English (US) |
---|---|
Pages (from-to) | 5696-5701 |
Number of pages | 6 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 45 |
Issue number | 7 |
DOIs | |
State | Published - Jul 7 2006 |
Externally published | Yes |
Keywords
- Chemical mechanical planarization (CMP)
- Coefficient of friction (COF)
- Pads
- Removal rate
- Tribology
- Water soluble particle (WSP)
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)