TY - GEN
T1 - Tribological, thermal, and kinetic attributes of 300 vs. 450 mm chemical mechanical planarization processes
AU - Jiao, Yubo
AU - Liao, Xiaoyan
AU - Wu, Changhong
AU - Zhuang, Yun
AU - Sampurno, Yasa
AU - Theng, Siannie
AU - Godlstein, Michael
AU - Philipossian, Ara
N1 - Publisher Copyright:
© ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings. All rights reserved.
PY - 2012
Y1 - 2012
N2 - An existing 300 mm CMP tool has been modified to polish 450 mm wafers in order to demonstrate experimentally whether any differences exist in the tribological and thermal characteristics of the two processes, and from that, to infer whether one can expect any removal rate differences between the two systems. Results suggest that, within the ranges of parameter investigated, the two systems behave similarly in terms of their coefficients of friction and lubrication regimes. Additionally, it is shown that the 450 mm process, once adjusted for its platen velocity, runs only slightly warmer (by 1 to 2 °C) than its 300 mm counterpart. Experimental data, coupled with copper removal rate simulations show that the wafer surface reaction temperatures of the 450 mm adjusted process are higher (by 2 to 3 °C) than the 300 mm process. Consequently, simulated copper removal rates for the 450 mm adjusted process are higher (by 8 to 31%) than those of the 300 mm process.
AB - An existing 300 mm CMP tool has been modified to polish 450 mm wafers in order to demonstrate experimentally whether any differences exist in the tribological and thermal characteristics of the two processes, and from that, to infer whether one can expect any removal rate differences between the two systems. Results suggest that, within the ranges of parameter investigated, the two systems behave similarly in terms of their coefficients of friction and lubrication regimes. Additionally, it is shown that the 450 mm process, once adjusted for its platen velocity, runs only slightly warmer (by 1 to 2 °C) than its 300 mm counterpart. Experimental data, coupled with copper removal rate simulations show that the wafer surface reaction temperatures of the 450 mm adjusted process are higher (by 2 to 3 °C) than the 300 mm process. Consequently, simulated copper removal rates for the 450 mm adjusted process are higher (by 8 to 31%) than those of the 300 mm process.
KW - 300 vs. 450 mm
KW - Chemical Mechanical Polishing
KW - Coefficient of Friction
KW - Removal Rate
KW - Wafer Surface Reaction Temperature
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M3 - Conference contribution
AN - SCOPUS:85099441533
T3 - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
SP - 357
EP - 362
BT - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
PB - VDE Verlag GmbH
T2 - 2012 International Conference on Planarization/CMP Technology, ICPT 2012
Y2 - 15 October 2012 through 17 October 2012
ER -