TY - GEN
T1 - Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process
AU - Han, Zhenxing
AU - Zhuang, Yun
AU - Sampurno, Yasa
AU - Meled, Anand
AU - Jiao, Yubo
AU - Wei, Xiaomin
AU - Cheng, Jiang
AU - Moinpour, Mansour
AU - Hooper, Don
AU - Philipossian, Ara
PY - 2010
Y1 - 2010
N2 - The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Boundary lubrication was the dominant tribological mechanism for Cabot Microelectronics Corporation DlOO concentrically grooved pad. For Dow Electronic Materials IClOOO K-groove pad, the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant ratios indicated that the IC1000 generally produced a more mechanically controlled removal mechanism in this study.
AB - The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Boundary lubrication was the dominant tribological mechanism for Cabot Microelectronics Corporation DlOO concentrically grooved pad. For Dow Electronic Materials IClOOO K-groove pad, the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant ratios indicated that the IC1000 generally produced a more mechanically controlled removal mechanism in this study.
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M3 - Conference contribution
AN - SCOPUS:79957649251
SN - 9781617822810
T3 - Advanced Metallization Conference (AMC)
SP - 282
EP - 283
BT - Advanced Metallization Conference 2010
T2 - Advanced Metallization Conference 2010
Y2 - 5 October 2010 through 7 October 2010
ER -