Tribological and kinetic characterization of 300-mm copper chemical mechanical planarization process

Zhenxing Han, Yun Zhuang, Yasa Sampurno, Anand Meled, Yubo Jiao, Xiaomin Wei, Jiang Cheng, Mansour Moinpour, Don Hooper, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The tribological and kinetic attributes of 300-mm copper chemical mechanical planarization process were characterized in this study. Boundary lubrication was the dominant tribological mechanism for Cabot Microelectronics Corporation DlOO concentrically grooved pad. For Dow Electronic Materials IClOOO K-groove pad, the tribological mechanism transitioned from boundary lubrication to partial lubrication. For both pads, copper removal rate exhibited highly non-Prestonian behavior. A two-step modified Langmuir-Hinshelwood model was used to simulate copper removal rate, wafer surface reaction temperature, as well as chemical and mechanical rate constants. The simulated copper removal rates agreed very well with the experimental values. The simulated chemical rate constant to mechanical rate constant ratios indicated that the IC1000 generally produced a more mechanically controlled removal mechanism in this study.

Original languageEnglish (US)
Title of host publicationAdvanced Metallization Conference 2010
Number of pages2
StatePublished - 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766


OtherAdvanced Metallization Conference 2010
Country/TerritoryUnited States
CityAlbany, NY

ASJC Scopus subject areas

  • Materials Science(all)
  • Industrial and Manufacturing Engineering


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