Abstract
A technique for fabricating transparent waveguides on the same wafer as a quantum well (QW) DBR laser array has been developed. High [MeV] energy ion implantation is used to create a large number of vacancies and interstitials throughout the active region of the device. Upon annealing, these entities enhance the intermixing of the QW and barrier materials resulting in a blue shift of the QW bandgap. Energy shifts (measured using low temperature photoluminescence spectroscopy) of greater than 60 meV can be achieved. Room temperature waveguide absorption measurements verify the shift in the bandgap energy and confirm that the waveguide is now effectively transparent in the wavelength range of the QW lasers. This technique is being used in an eight wavelength WDM transmitter array in which the waveguiding region is selectively implanted and blue shifted.
Original language | English (US) |
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Pages (from-to) | 115-122 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 2402 |
DOIs | |
State | Published - Mar 23 1995 |
Externally published | Yes |
Event | Components for Wavelength Division Multiplexing 1995 - San Jose, United States Duration: Feb 1 1995 → Feb 28 1995 |
Keywords
- Ion implantation
- Quantum well intermixing
- Quantum well laser
- Waveguide
- Waveguide
- Wavelength division multiplexing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering