@inproceedings{7939534ab2e34ab5af433fcb8fba977d,
title = "Transmission electron microscopy study of metamorphic III-Sb VECSELs on GaAs/AlGaAs distributed Bragg reflectors",
abstract = "The growth of antimonide vertical external cavity surface emitting lasers (VECSELs) for 1.8 to 2.8 μm emission wavelength is typically based on InGaAsSb/AlGaAsSb quantum wells on GaSb/AlAsSb DBRs which are in turn grown on GaSb substrates. Thus the entire structure is lattice matched to GaSb's lattice constant of 6.09 {\AA}. The growth of such VECSELs on GaAs/AlGaAs DBRs could be of significant advantage on account of a more mature DBR technology based on GaAs substrates, better thermal conductivity of the III-As DBRs compared to the III-Sb DBRs and better etch stop recipes for arsenide semiconductors compared to antimonides. However, the growth of such a laser would involve overcoming a 7.8% mismatch between the active region and the GaAs/AlGaAs DBR. Furthermore, the vertical cavity structure requires the quantum wells to be in very close proximity to the 7.8% mismatched GaSb/GaAs interface.1 The challenge is therefore to reduce the threading dislocation density in the active region without a very thick metamorphic buffer or dislocation bending layers.",
author = "P. Ahirwar and D. Shima and Rotter, {T. J.} and S. Clark and Hains, {C. P.} and G. Balakrishnan and Alexandre Laurain and Jorg Hader and Lai, {Yi Ying} and Wang, {Tsuei Lian} and Mike Yarborough and Moloney, {J. V.}",
year = "2012",
doi = "10.1109/IPCon.2012.6358814",
language = "English (US)",
isbn = "9781457707315",
series = "2012 IEEE Photonics Conference, IPC 2012",
pages = "699--700",
booktitle = "2012 IEEE Photonics Conference, IPC 2012",
note = "25th IEEE Photonics Conference, IPC 2012 ; Conference date: 23-09-2012 Through 27-09-2012",
}