Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

J. Hannigan; Guoqiang Cui; R. Loeckenhoff; D. Foster; F. M. Matinaga; H. Wang; M. G. Raymer; M. Holland; S. Bhongale; S. Mosor; S. Chatterjee; H. M. Gibbs; G. Khitrova

Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

J. Hannigan, Guoqiang Cui, R. Loeckenhoff, D. Foster, F. M. Matinaga, H. Wang, M. G. Raymer, M. Holland, S. Bhongale, S. Mosor, S. Chatterjee, H. M. Gibbs, G. Khitrova

Optical Sciences, College of

Research output: Contribution to conference › Paper › peer-review

Abstract

A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.

Original language	English (US)
Pages	QME6/1-QME6/3
State	Published - 2003
Event	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States Duration: Jun 1 2003 → Jun 6 2003

Other

Other	Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
Country/Territory	United States
City	Baltimore, MD.
Period	6/1/03 → 6/6/03

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

Hannigan, J., Cui, G., Loeckenhoff, R., Foster, D., Matinaga, F. M., Wang, H., Raymer, M. G., Holland, M., Bhongale, S., Mosor, S., Chatterjee, S., Gibbs, H. M., & Khitrova, G. (2003). Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity. QME6/1-QME6/3. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.

Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity. / Hannigan, J.; Cui, Guoqiang; Loeckenhoff, R. et al.
2003. QME6/1-QME6/3 Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.

Research output: Contribution to conference › Paper › peer-review

Hannigan, J, Cui, G, Loeckenhoff, R, Foster, D, Matinaga, FM, Wang, H, Raymer, MG, Holland, M, Bhongale, S, Mosor, S, Chatterjee, S, Gibbs, HM & Khitrova, G 2003, 'Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity', Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States, 6/1/03 - 6/6/03 pp. QME6/1-QME6/3.

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abstract = "A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.",

author = "J. Hannigan and Guoqiang Cui and R. Loeckenhoff and D. Foster and Matinaga, {F. M.} and H. Wang and Raymer, {M. G.} and M. Holland and S. Bhongale and S. Mosor and S. Chatterjee and Gibbs, {H. M.} and G. Khitrova",

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AU - Hannigan, J.

AU - Cui, Guoqiang

AU - Loeckenhoff, R.

AU - Foster, D.

AU - Matinaga, F. M.

AU - Wang, H.

AU - Raymer, M. G.

AU - Holland, M.

AU - Bhongale, S.

AU - Mosor, S.

AU - Chatterjee, S.

AU - Gibbs, H. M.

AU - Khitrova, G.

PY - 2003

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AB - A hemispherical cavity containing interface-fluctuation GaAs quantum dots was constructed to achieve cavity-QED strong coupling between a cavity mode and a single QD. It consists of a 50-micron radius-of-curvature mirror and a semiconductor DBR mirror.

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Y2 - 1 June 2003 through 6 June 2003

ER -

Toward cavity-QED strong coupling of a semiconductor quantum dot to an external optical micro-cavity

Abstract

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ASJC Scopus subject areas

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