Abstract
Sol-Gel derived PZT thin films were irradiated to a total-dose of 1 Mrad(Si), or 86 krad(PZT), under open circuit bias. An asymmetric distortion in the hysteresis curves was observed. The distortion depends on the polarization state of the capacitor before irradiation. Post-irradiation electrical cycling makes the hysteresis loops symmetric initially, but results in fatigue effects. The leakage and switching current behavior after irradiation and post-rad cycling were studied using a static current vs. voltage measurement. Mechanisms of radiation-induced distortion and the fatigue effect during post-rad cycling are discussed.
Original language | English (US) |
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Pages (from-to) | 2036-2043 |
Number of pages | 8 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 39 |
Issue number | 6 |
DOIs | |
State | Published - Dec 1992 |
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering