Total-Dose Radiation Effects on Sol-Gel Derived PZT Thin Films

S. C. Lee, R. D. Schrimpf, K. F. Galloway, G. Teowee, D. P. Birnie, D. R. Uhlmann

Research output: Contribution to journalArticlepeer-review

49 Scopus citations


Sol-Gel derived PZT thin films were irradiated to a total-dose of 1 Mrad(Si), or 86 krad(PZT), under open circuit bias. An asymmetric distortion in the hysteresis curves was observed. The distortion depends on the polarization state of the capacitor before irradiation. Post-irradiation electrical cycling makes the hysteresis loops symmetric initially, but results in fatigue effects. The leakage and switching current behavior after irradiation and post-rad cycling were studied using a static current vs. voltage measurement. Mechanisms of radiation-induced distortion and the fatigue effect during post-rad cycling are discussed.

Original languageEnglish (US)
Pages (from-to)2036-2043
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1992

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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