Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

Alan R. Kost; Ulrich Pfeiffer; Gottfried Döhler

doi:10.1016/j.spmi.2004.12.005

Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

Alan R. Kost, Ulrich Pfeiffer, Gottfried Döhler

Optical Sciences

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.

Original language	English (US)
Pages (from-to)	373-379
Number of pages	7
Journal	Superlattices and Microstructures
Volume	37
Issue number	6
DOIs	https://doi.org/10.1016/j.spmi.2004.12.005
State	Published - Jun 2005

Keywords

Excitation correlation
Mid-infrared
Photoluminescence
Recombination
Superlattice

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2004.12.005

Cite this

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title = "Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation",

abstract = "We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.",

keywords = "Excitation correlation, Mid-infrared, Photoluminescence, Recombination, Superlattice",

author = "Kost, {Alan R.} and Ulrich Pfeiffer and Gottfried D{\"o}hler",

year = "2005",

month = jun,

doi = "10.1016/j.spmi.2004.12.005",

language = "English (US)",

volume = "37",

pages = "373--379",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "6",

}

TY - JOUR

T1 - Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

AU - Kost, Alan R.

AU - Pfeiffer, Ulrich

AU - Döhler, Gottfried

PY - 2005/6

Y1 - 2005/6

N2 - We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.

AB - We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.

KW - Excitation correlation

KW - Mid-infrared

KW - Photoluminescence

KW - Recombination

KW - Superlattice

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U2 - 10.1016/j.spmi.2004.12.005

DO - 10.1016/j.spmi.2004.12.005

M3 - Article

AN - SCOPUS:18544377489

SN - 0749-6036

VL - 37

SP - 373

EP - 379

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 6

ER -

Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

Abstract

Keywords

ASJC Scopus subject areas

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