We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.
- Excitation correlation
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering