Time-resolved photocarrier decay for mid-infrared semiconductors with excitation correlation

Alan R. Kost, Ulrich Pfeiffer, Gottfried Döhler

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


We describe the extension of excitation correlation to the mid-infrared. This technique provides a convenient alternative to more complicated pump-probe and time-resolved photoluminescence approaches for investigating electron-hole recombination in semiconductors. Excitation correlation is used to determine the Shockley-Read-Hall and Auger coefficients for a GaInSb/InAs multiple quantum sample with an absorption edge near 3.6 μm. The results are A=0.20±0.02ns-1, C=4.0±0.4×10-27cm6/s, and ntr=8.5±0.2×1016cm-3, where ntr is a saturation density for Shockley-Read-Hall recombination and also an estimate for the density of mid-gap trap levels.

Original languageEnglish (US)
Pages (from-to)373-379
Number of pages7
JournalSuperlattices and Microstructures
Issue number6
StatePublished - Jun 2005


  • Excitation correlation
  • Mid-infrared
  • Photoluminescence
  • Recombination
  • Superlattice

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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