Time-domain vertical-external-cavity semiconductor laser simulation

Miroslav Kolesik; Jerome V. Moloney

doi:10.1109/JQE.2007.898833

Time-domain vertical-external-cavity semiconductor laser simulation

Miroslav Kolesik, Jerome V. Moloney

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

Original language	English (US)
Pages (from-to)	588-596
Number of pages	9
Journal	IEEE Journal of Quantum Electronics
Volume	43
Issue number	7
DOIs	https://doi.org/10.1109/JQE.2007.898833
State	Published - Jul 2007

Keywords

Disk lasers
Modeling
SESAM
Surface-emitting lasers
Vertical external cavity semiconductor lasers

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2007.898833

Cite this

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title = "Time-domain vertical-external-cavity semiconductor laser simulation",

abstract = "A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.",

keywords = "Disk lasers, Modeling, SESAM, Surface-emitting lasers, Vertical external cavity semiconductor lasers",

author = "Miroslav Kolesik and Moloney, {Jerome V.}",

note = "Funding Information: Manuscript received June 20, 2006; revised January 18, 2007. This work was supported in part by the Air Force Office of Scientific Research (AFOSR) under Grants F49620-02-1-0380 and FA9550-04-1-0213. The work of J. V. Moloney was supported in part by the Alexander von Humboldt Foundation.",

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doi = "10.1109/JQE.2007.898833",

language = "English (US)",

volume = "43",

pages = "588--596",

journal = "IEEE Journal of Quantum Electronics",

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AU - Kolesik, Miroslav

AU - Moloney, Jerome V.

N1 - Funding Information: Manuscript received June 20, 2006; revised January 18, 2007. This work was supported in part by the Air Force Office of Scientific Research (AFOSR) under Grants F49620-02-1-0380 and FA9550-04-1-0213. The work of J. V. Moloney was supported in part by the Alexander von Humboldt Foundation.

PY - 2007/7

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N2 - A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

AB - A time-domain simulator for Vertical External Cavity Semiconductor Lasers (VECSEL) is described in detail. The core of the model employs a digital filter method to model the optical properties of the active mirror over a wide range of frequencies, temperatures, and carrier densities. The method is also applicable without modifications to the time-domain simulation of semiconductor saturable mirrors (SESAM). As an illustration, ultrashort pulse generation is simulated in two kinds of devices: in a synchronously pumped VECSEL and in a laser passively mode-locked by SESAM.

KW - Disk lasers

KW - Modeling

KW - SESAM

KW - Surface-emitting lasers

KW - Vertical external cavity semiconductor lasers

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Time-domain vertical-external-cavity semiconductor laser simulation

Abstract

Keywords

ASJC Scopus subject areas

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