Time-domain simulation of vertical external cavity semiconductor lasers

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Power-scaling issues, such as the role of Amplified Spontaneous Emission, are studied in Vertical External Cavity Semiconductor Lasers (VECSEL) by numerical simulation. Comprehensive simulation approach is described.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2005
PublisherOptical Society of America (OSA)
ISBN (Print)1557527970, 9781557527974
StatePublished - 2005
EventFrontiers in Optics, FiO 2005 - Tucson, AZ, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701


OtherFrontiers in Optics, FiO 2005
Country/TerritoryUnited States
CityTucson, AZ

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics


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