@inproceedings{4a480bf5e6b34212b28faa6fc3be1a66,
title = "Tightly pitched sub-10 nm graphene nanoribbon arrays via seed mediated growth on Ge (001)",
abstract = "Graphene nanoribbons must have smooth, armchair edges, sub-lOnm widths, lengths greater than 100nm, controlled placement and orientation to achieve easy integration into semiconductor electronics. However, fabricating ribbons possessing all of these properties has eluded current methods in literature. Here, we demonstrate the seed-mediated growth of graphene nanoribbons on Ge (001) through chemical vapor deposition. Through the use of graphene seeds, aligned, registered arrays of graphene nanoribbons are fabricated with pitches (seed to seed distance) varying from 50 to 500 nm. Ribbon width and length show no relation with pitch, indicating growth is attachment limited and does not depend on nanoribbon separation. Arrays of unidirectionally aligned, armchair edged nanoribbons with lengths greater than 200 nm and sub-10 nm widths are fabricated for the first time.",
author = "Way, {A. J.} and Murray, {E. A.} and Jacobberger, {R. M.} and V. Saraswat and F. Goeltl and M. Mavrikakis and Arnold, {M. S.}",
note = "Funding Information: This work was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DE-SC0016007 (A.J.W, R.M.J., V.S., M.S.A.) AJ.W. also acknowledges support from the NSF Graduate Research Fellowship Program, Award No. DGE-1256259. Research partially supported by the Robert Draper Technology Innovation Fund (Grant No. 135-AAC6972) and the U.S. Department of Energy, Basic Energy Sciences, Division of Chemical Sciences (Grant No. DE-FG02-05ER15731) (E.A.M., F.G., and M.M.) for DFT calculations. The authors gratefully acknowledge the use of facilities and instrumentation supported by NSF through the University of Wisconsin Materials Research Science and Engineering Center (DMR-1720415). Publisher Copyright: {\textcopyright} The Electrochemical Society.; 2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference ; Conference date: 02-06-2019 Through 06-06-2019",
year = "2019",
doi = "10.1149/09301.0121ecst",
language = "English (US)",
series = "ECS Transactions",
publisher = "IOP Publishing Ltd.",
number = "1",
pages = "121--124",
editor = "Eriksson, {M. A.} and Lagally, {M. G.}",
booktitle = "ECS Transactions",
address = "United Kingdom",
edition = "1",
}