Tightly pitched sub-10 nm graphene nanoribbon arrays via seed mediated growth on Ge (001)

A. J. Way, E. A. Murray, R. M. Jacobberger, V. Saraswat, F. Goeltl, M. Mavrikakis, M. S. Arnold

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Graphene nanoribbons must have smooth, armchair edges, sub-lOnm widths, lengths greater than 100nm, controlled placement and orientation to achieve easy integration into semiconductor electronics. However, fabricating ribbons possessing all of these properties has eluded current methods in literature. Here, we demonstrate the seed-mediated growth of graphene nanoribbons on Ge (001) through chemical vapor deposition. Through the use of graphene seeds, aligned, registered arrays of graphene nanoribbons are fabricated with pitches (seed to seed distance) varying from 50 to 500 nm. Ribbon width and length show no relation with pitch, indicating growth is attachment limited and does not depend on nanoribbon separation. Arrays of unidirectionally aligned, armchair edged nanoribbons with lengths greater than 200 nm and sub-10 nm widths are fabricated for the first time.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsM. A. Eriksson, M. G. Lagally
PublisherIOP Publishing Ltd.
Pages121-124
Number of pages4
Edition1
ISBN (Electronic)9781607688853, 9781607688853
DOIs
StatePublished - 2019
Externally publishedYes
Event2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference - Madison, United States
Duration: Jun 2 2019Jun 6 2019

Publication series

NameECS Transactions
Number1
Volume93
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference
Country/TerritoryUnited States
CityMadison
Period6/2/196/6/19

ASJC Scopus subject areas

  • Engineering(all)

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