Three-Dimensional Magnetic Page Memory

O. Ozatay, A. Gokce, T. Hauet, L. Folks, A. Giordano, G. Finocchio

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The increasing need to store large amounts of information with an ultradense, reliable, low-power, and low-cost memory device is driving aggressive efforts to improve on current perpendicular magnetic recording technology. However, the difficulties in fabricating small-grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate the development of alternative methods, such as the patterning of magnetic nanoislands and use of energy assistance for future applications. In addition, from both a sensor perspective and a memory perspective, three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in planar structures. Here we demonstrate a three-dimensional magnetic memory (magnetic page memory) based on thermally assisted and stray-field-induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Use of spin-torque-induced domain multiplication in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly-three-dimensional integration.

Original languageEnglish (US)
Article number014002
JournalPhysical Review Applied
Volume11
Issue number1
DOIs
StatePublished - Jan 2 2019
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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