TY - JOUR
T1 - Three-Dimensional Magnetic Page Memory
AU - Ozatay, O.
AU - Gokce, A.
AU - Hauet, T.
AU - Folks, L.
AU - Giordano, A.
AU - Finocchio, G.
N1 - Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/1/2
Y1 - 2019/1/2
N2 - The increasing need to store large amounts of information with an ultradense, reliable, low-power, and low-cost memory device is driving aggressive efforts to improve on current perpendicular magnetic recording technology. However, the difficulties in fabricating small-grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate the development of alternative methods, such as the patterning of magnetic nanoislands and use of energy assistance for future applications. In addition, from both a sensor perspective and a memory perspective, three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in planar structures. Here we demonstrate a three-dimensional magnetic memory (magnetic page memory) based on thermally assisted and stray-field-induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Use of spin-torque-induced domain multiplication in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly-three-dimensional integration.
AB - The increasing need to store large amounts of information with an ultradense, reliable, low-power, and low-cost memory device is driving aggressive efforts to improve on current perpendicular magnetic recording technology. However, the difficulties in fabricating small-grain recording media while maintaining thermal stability and a high signal-to-noise ratio motivate the development of alternative methods, such as the patterning of magnetic nanoislands and use of energy assistance for future applications. In addition, from both a sensor perspective and a memory perspective, three-dimensional spintronic devices are highly desirable to overcome the restrictions on the functionality in planar structures. Here we demonstrate a three-dimensional magnetic memory (magnetic page memory) based on thermally assisted and stray-field-induced transfer of domains in a vertical stack of magnetic nanowires with perpendicular anisotropy. Use of spin-torque-induced domain multiplication in such a device with periodic pinning sites provides additional degrees of freedom by allowing lateral information flow to realize truly-three-dimensional integration.
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U2 - 10.1103/PhysRevApplied.11.014002
DO - 10.1103/PhysRevApplied.11.014002
M3 - Article
AN - SCOPUS:85059869870
SN - 2331-7019
VL - 11
JO - Physical Review Applied
JF - Physical Review Applied
IS - 1
M1 - 014002
ER -