Thermal spin transport and applications

S. Y. Huang; W. G. Wang; D. Qu; S. F. Lee; J. Kwo; C. L. Chien

doi:10.1109/IEDM.2012.6479022

Thermal spin transport and applications

S. Y. Huang, W. G. Wang, D. Qu, S. F. Lee, J. Kwo, C. L. Chien

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.^1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.⁴ This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)^1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).⁴ These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.⁵

Original language	English (US)
Title of host publication	2012 IEEE International Electron Devices Meeting, IEDM 2012
Pages	11.2.1-11.2.4
DOIs	https://doi.org/10.1109/IEDM.2012.6479022
State	Published - 2012
Externally published	Yes
Event	2012 IEEE International Electron Devices Meeting, IEDM 2012 - San Francisco, CA, United States Duration: Dec 10 2012 → Dec 13 2012

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2012 IEEE International Electron Devices Meeting, IEDM 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/10/12 → 12/13/12

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2012.6479022

Cite this

Huang, SY, Wang, WG, Qu, D, Lee, SF, Kwo, J & Chien, CL 2012, Thermal spin transport and applications. in 2012 IEEE International Electron Devices Meeting, IEDM 2012., 6479022, Technical Digest - International Electron Devices Meeting, IEDM, pp. 11.2.1-11.2.4, 2012 IEEE International Electron Devices Meeting, IEDM 2012, San Francisco, CA, United States, 12/10/12. https://doi.org/10.1109/IEDM.2012.6479022

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title = "Thermal spin transport and applications",

abstract = "Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.4 This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).4 These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.5",

author = "Huang, {S. Y.} and Wang, {W. G.} and D. Qu and Lee, {S. F.} and J. Kwo and Chien, {C. L.}",

year = "2012",

doi = "10.1109/IEDM.2012.6479022",

language = "English (US)",

isbn = "9781467348706",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "11.2.1--11.2.4",

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note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",

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TY - GEN

T1 - Thermal spin transport and applications

AU - Huang, S. Y.

AU - Wang, W. G.

AU - Qu, D.

AU - Lee, S. F.

AU - Kwo, J.

AU - Chien, C. L.

PY - 2012

Y1 - 2012

N2 - Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.4 This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).4 These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.5

AB - Spin caloritronics, exploiting the interaction between spin with heat currents, offers a promising path to further reduction in both the size and power consumption of solid state devices. Despite recent observations of spin dependent thermal transport by several groups, the underlying physical mechanism remains unsettled.1-3 Our study has demonstrated the profound effect of substrate on the spin-dependent thermal transport by patterned ferromagnetic thin films.4 This unexpected behavior is due to an out-of-plane temperature gradient imposed by the thermal conduction through the substrate, resulting in a mixture of anomalous Nernst effects (ANE) and spin Seebeck effect (SSE)1-3. Only with substrate-free sample have we determined the intrinsic spin-dependent thermal transport with characteristics and field sensitivity similar to those of anisotropic magnetoresistance (AMR) effect and planer Hall effect (PHE).4 These effects are sensitive to magnetic fields, encouraging for future applications such as spin thermoelectric coating, and sensors.5

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DO - 10.1109/IEDM.2012.6479022

M3 - Conference contribution

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SN - 9781467348706

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 11.2.1-11.2.4

BT - 2012 IEEE International Electron Devices Meeting, IEDM 2012

T2 - 2012 IEEE International Electron Devices Meeting, IEDM 2012

Y2 - 10 December 2012 through 13 December 2012

ER -

Thermal spin transport and applications

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