Thermal characterization of eutectic alloy thermal interface materials with void-like inclusions

Xuejiao Hu, Linan Jiang, Kenneth E. Goodson

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

Void formation and growth is a major problem for solder interface materials, because they impede heat conduction from the silicon die to heat spreader/heat sink in semiconductor electronic devices. This work uses infrared microscopy to measure temperature distributions on the interfacial layer through the silicon die. Hot spots, with a 15°C temperature rise above average die temperature, are found right on top of void-like inclusions at a device power density above 50 W/cm 2. The technique presented in the manuscript, with a theoretical spatial resolution of 3-5μm, is promising for thermal characterization of voids in interface solder layers.

Original languageEnglish (US)
Pages (from-to)98-103
Number of pages6
JournalAnnual IEEE Semiconductor Thermal Measurement and Management Symposium
Volume20
StatePublished - 2004
Externally publishedYes
Event20th Annual IEEE Semiconductor Thermal Measurement and Management Symposium - Proceedings 2004 - San Jose, CA., United States
Duration: Mar 9 2004Mar 11 2004

Keywords

  • Solder die-attach
  • Thermal contact resistance
  • Through-wafer infrared microscopy
  • Void formation and growth

ASJC Scopus subject areas

  • Instrumentation
  • Electrical and Electronic Engineering

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