Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich; J. Hendrickson; D. Rülke; H. Kalt; M. Hetterich; G. Khitrova; H. Gibbs; S. Linden; M. Wegener; D. Z. Hu; D. M. Schaadt

doi:10.1063/1.3666332

Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich
, J. Hendrickson
, D. Rülke
, H. Kalt
, M. Hetterich
, G. Khitrova
, H. Gibbs
, S. Linden
, M. Wegener
, D. Z. Hu
, D. M. Schaadt

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	217-218
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666332
State	Published - 2011
Externally published	Yes
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: Jul 25 2010 → Jul 30 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	7/25/10 → 7/30/10

Keywords

Quantum dots
annealing
molecular beam epitaxy
site-selective growth

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.3666332

Cite this

Helfrich, M., Hendrickson, J., Rülke, D., Kalt, H., Hetterich, M., Khitrova, G., Gibbs, H., Linden, S., Wegener, M., Hu, D. Z., & Schaadt, D. M. (2011). Thermal annealing of InAs quantum dots on patterned GaAs substrates. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 217-218). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666332

Helfrich, M, Hendrickson, J, Rülke, D, Kalt, H, Hetterich, M, Khitrova, G, Gibbs, H, Linden, S, Wegener, M, Hu, DZ & Schaadt, DM 2011, Thermal annealing of InAs quantum dots on patterned GaAs substrates. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 217-218, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 7/25/10. https://doi.org/10.1063/1.3666332

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title = "Thermal annealing of InAs quantum dots on patterned GaAs substrates",

abstract = "We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.",

keywords = "Quantum dots, annealing, molecular beam epitaxy, site-selective growth",

author = "M. Helfrich and J. Hendrickson and D. R{\"u}lke and H. Kalt and M. Hetterich and G. Khitrova and H. Gibbs and S. Linden and M. Wegener and Hu, \{D. Z.\} and Schaadt, \{D. M.\}",

year = "2011",

doi = "10.1063/1.3666332",

language = "English (US)",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "217--218",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

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T1 - Thermal annealing of InAs quantum dots on patterned GaAs substrates

AU - Helfrich, M.

AU - Hendrickson, J.

AU - Rülke, D.

AU - Kalt, H.

AU - Hetterich, M.

AU - Khitrova, G.

AU - Gibbs, H.

AU - Linden, S.

AU - Wegener, M.

AU - Hu, D. Z.

AU - Schaadt, D. M.

PY - 2011

Y1 - 2011

N2 - We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

AB - We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

KW - Quantum dots

KW - annealing

KW - molecular beam epitaxy

KW - site-selective growth

UR - https://www.scopus.com/pages/publications/84855481785

UR - https://www.scopus.com/pages/publications/84855481785#tab=citedBy

U2 - 10.1063/1.3666332

DO - 10.1063/1.3666332

M3 - Conference contribution

AN - SCOPUS:84855481785

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 217

EP - 218

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Thermal annealing of InAs quantum dots on patterned GaAs substrates

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Keywords

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