Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich; J. Hendrickson; D. Rülke; H. Kalt; M. Hetterich; G. Khitrova; H. Gibbs; S. Linden; M. Wegener; D. Z. Hu; D. M. Schaadt

doi:10.1063/1.3666332

Thermal annealing of InAs quantum dots on patterned GaAs substrates

M. Helfrich, J. Hendrickson, D. Rülke, H. Kalt, M. Hetterich, G. Khitrova, H. Gibbs, S. Linden, M. Wegener, D. Z. Hu, D. M. Schaadt

Optical Sciences, College of

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

Original language	English (US)
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	217-218
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666332
State	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: Jul 25 2010 → Jul 30 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	7/25/10 → 7/30/10

Keywords

Quantum dots
annealing
molecular beam epitaxy
site-selective growth

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1063/1.3666332

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Helfrich, M., Hendrickson, J., Rülke, D., Kalt, H., Hetterich, M., Khitrova, G., Gibbs, H., Linden, S., Wegener, M., Hu, D. Z., & Schaadt, D. M. (2011). Thermal annealing of InAs quantum dots on patterned GaAs substrates. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 217-218). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666332

Helfrich, M, Hendrickson, J, Rülke, D, Kalt, H, Hetterich, M, Khitrova, G, Gibbs, H, Linden, S, Wegener, M, Hu, DZ & Schaadt, DM 2011, Thermal annealing of InAs quantum dots on patterned GaAs substrates. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 217-218, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 7/25/10. https://doi.org/10.1063/1.3666332

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title = "Thermal annealing of InAs quantum dots on patterned GaAs substrates",

abstract = "We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.",

keywords = "Quantum dots, annealing, molecular beam epitaxy, site-selective growth",

author = "M. Helfrich and J. Hendrickson and D. R{\"u}lke and H. Kalt and M. Hetterich and G. Khitrova and H. Gibbs and S. Linden and M. Wegener and Hu, {D. Z.} and Schaadt, {D. M.}",

year = "2011",

doi = "10.1063/1.3666332",

language = "English (US)",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "217--218",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

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T1 - Thermal annealing of InAs quantum dots on patterned GaAs substrates

AU - Helfrich, M.

AU - Hendrickson, J.

AU - Rülke, D.

AU - Kalt, H.

AU - Hetterich, M.

AU - Khitrova, G.

AU - Gibbs, H.

AU - Linden, S.

AU - Wegener, M.

AU - Hu, D. Z.

AU - Schaadt, D. M.

PY - 2011

Y1 - 2011

N2 - We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

AB - We investigated the effect of in-situ thermal annealing on InAs quantum dots (QDs) grown site-selectively on pre-patterned GaAs substrates. We compare as grown and annealed samples. A morphological transition is observed where originally two QDs merge into one larger dot.

KW - Quantum dots

KW - annealing

KW - molecular beam epitaxy

KW - site-selective growth

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U2 - 10.1063/1.3666332

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M3 - Conference contribution

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T3 - AIP Conference Proceedings

SP - 217

EP - 218

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

Thermal annealing of InAs quantum dots on patterned GaAs substrates

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Keywords

ASJC Scopus subject areas

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