Abstract
Nonlinear optical absorption spectra and refractive index changes are computed for coupled-band semiconductor quantum wells by numerically solving the interband polarization equation. The theory combines band-structure engineering with many-body techniques and is applied to lattice-matched GaAs-AlGaAs and strained InGaAs-GaAs systems with carrier densities ranging from the excitonic to the gain regimes. Good agreement with recent experimental results is found.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 279-281 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 64 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1994 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)