Abstract
A natural explanation for the carrier concentration-dependent electronic behavior in the layered cobaltates emerges within correlated-electron Hamiltonians with finite on-site and significant nearest neighbor hole-hole Coulomb repulsions. The nearest neighbor repulsion decreases hole double occupancy below hole density 13, but increases the same at higher hole densities. Our conclusion is valid for both single-band and three-band extended Hubbard Hamiltonians, and sheds light on concentration dependent eg′ hole occupancy within the latter.
Original language | English (US) |
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Article number | 216401 |
Journal | Physical review letters |
Volume | 106 |
Issue number | 21 |
DOIs | |
State | Published - May 25 2011 |
ASJC Scopus subject areas
- General Physics and Astronomy