Abstract
All-optical semiconductor devices are numerically modeled and optimized using a microscopic theory for the optical nonlinearities of room-temperature GaAs. Single-frequency NOR-gate operation in reflection is predicted.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | Optical Soc of America |
| Pages | 225-228 |
| Number of pages | 4 |
| ISBN (Print) | 0936659661 |
| State | Published - 1987 |
ASJC Scopus subject areas
- General Engineering