Abstract
The interlayer dielectric (ILD) removal rates, coefficients of friction, and pad flattening ratio of silicon dioxide films were analyzed. Pad and wafer were rotated in the same direction at the same rate at a relative sliding speed of 0.62 m/sec, the pressure applied to the wafer was 20.7 kPa, and polishing timers were 2 min. When no conditioning was applied, the removal rate declined continuously to a very low level in the classical manner of polish rate decay. It was found that the secondary peak grew more quickly if irregular fumed slurry particles were used rather than spherical colloidal particles under otherwise identical loading conditions.
| Original language | English (US) |
|---|---|
| Pages | 9741-9748 |
| Number of pages | 8 |
| State | Published - 2004 |
| Event | 2004 AIChE Annual Meeting - Austin, TX, United States Duration: Nov 7 2004 → Nov 12 2004 |
Other
| Other | 2004 AIChE Annual Meeting |
|---|---|
| Country/Territory | United States |
| City | Austin, TX |
| Period | 11/7/04 → 11/12/04 |
ASJC Scopus subject areas
- General Engineering